Customer Background

A research institute under the Chinese Academy of Sciences, undertaking a major national project on compute-in-memory, needs to verify the sub-nanosecond write characteristics of three-terminal SOT-MRAM devices.

Challenges

• Precise application and high-speed sampling of narrow pulses at the 100-picosecond level

• Low device yield, requiring high-sensitivity bit error detection capability

• Systematic scanning of multi-dimensional parameter space (current/magnetic field/pulse width)

Jipiao Solution

Custom-developed ultra-high-speed pulse test module, integrating real-time bit error rate statistics and 3D parameter visualization analysis functions.

Achievements

• Successfully captured the S-curve of write error rate versus pulse width

• Determined the optimal write conditions, reducing write power consumption by 40%

• Relevant results published in Nature Electronics